Coulomb staircase in fused semiconducting InP nanowires under light illumination
نویسندگان
چکیده
Detailed electron transport analysis is performed for an ensemble of conical indium phosphide nanowires bridging two hydrogenated n-silicon electrodes. The current-voltage (Id-Vd) characteristics exhibit a Coulomb staircase in dark with a period of ~ 1 V at room temperature. The staircase is found to disappear under light illumination. This observation can be explained by assuming the presence of a tiny Coulomb island, and its existence is possible due to the large surface depletion region created within contributing nanowires. Electrons tunnel in and out of the Coulomb island, resulting in the Coulomb staircase Id-Vd. Applying light illumination raises the electron quasi-Fermi level and the tunneling barriers are buried, causing the Coulomb staircase to disappear.
منابع مشابه
Room-temperature Coulomb staircase in semiconducting InP nanowires modulated with light illumination.
Detailed electron transport analysis is performed for an ensemble of conical indium phosphide nanowires bridging two hydrogenated n(+)-silicon electrodes. The current-voltage (I-V) characteristics exhibit a Coulomb staircase in the dark with a period of ∼ 1 V at room temperature. The staircase is found to disappear under light illumination. This observation can be explained by assuming the pres...
متن کاملTransport in fused InP nanowire device in dark and under illumination: Coulomb staircase scenario
Electron transport is discussed for an ensemble of fused conical indium phosphide nanowires bridging two hydrogenated n-silicon electrodes. The current-voltage (Id-Vd) characteristics exhibit a Coulomb staircase in dark with a period of ~ 1 V but it disappears under light illumination in some devices, while Id-Vd is featureless smooth monotonic curve in other devices. It is shown that transport...
متن کاملImproving the optical properties of thin film plasmonic solar cells of InP absorber layer using nanowires
In this paper, a thin-film InP-based solar cell designed and simulated. The proposed InP solar cell has a periodic array of plasmonic back-reflector, which consists of a silver layer and two silver nanowires. The indium tin oxide (ITO) layer also utilized as an anti-reflection coating (ARC) layer on top. The design creates a light-trapping structure by using a plasmonic back-reflector and an an...
متن کاملAn Efficient and Effective Design of InP Nanowires for Maximal Solar Energy Harvesting
Solar cells based on subwavelength-dimensions semiconductor nanowire (NW) arrays promise a comparable or better performance than their planar counterparts by taking the advantages of strong light coupling and light trapping. In this paper, we present an accurate and time-saving analytical design for optimal geometrical parameters of vertically aligned InP NWs for maximal solar energy absorption...
متن کاملCoherent twinning phenomena: towards twinning superlattices in III-V semiconducting nanowires.
We report evidence in GaP and InP nanowires for a coherent modulation of the structure along the wire axis. By using electron diffraction, we have observed an additional series of diffraction peaks consistent with a quasiperiodic placement of twinning boundaries along the wire. This observation is indeed unexpected, as the vapor-liquid-solid growth conditions used to produce the nanowires were ...
متن کامل